Indian Company, an IndiRFTech classificationRF Chip Design
Agnit Semiconductors
Indian fab-lite semiconductor company developing GaN wafers, RF devices and modules for strategic and telecom applications.
About Agnit Semiconductors
Agnit Semiconductors is a Bengaluru-based deep-tech semiconductor company focused on Gallium Nitride (GaN) technology. Originating from research at the Indian Institute of Science (IISc), the company is building indigenous capabilities across GaN materials, semiconductor devices and products. Agnit develops GaN-based RF and power semiconductor devices targeting applications across defence, space, telecom infrastructure and other high-performance electronic systems. Its RF portfolio is focused on technologies such as GaN transistors and RF power devices where high power density, efficiency and operation at high frequencies are important. The company is working toward a vertically integrated semiconductor model in India, spanning technology development and device design through fabrication and commercialization. This makes Agnit part of India's emerging ecosystem of domestic companies developing strategic semiconductor technologies traditionally sourced from overseas suppliers.
Indigenous RF & wireless contribution
Develops GaN materials, RF devices and circuit technologies in India, drawing on research expertise from the Indian Institute of Science, Bengaluru.
Technology & capabilities
Technologies
Gallium nitrideGaN wafer technologyRF device designSemiconductor device processing
Specialties
GaN semiconductor developmentRF power devicesGaN materialsPower electronics
Applications
Wireless transmit systemsTelecommunicationsStrategic electronicsPower conversion
Products & technology areas
GaN wafersGaN RF devicesEvaluation boardsGaN power amplifiers
Leadership team
Latest news
Industry News
AGNIT Semiconductors CEO Discusses India's Semiconductor and Deep-Tech Manufacturing Future at TechSparks 2026
AGNIT Semiconductors CEO and Co-Founder Hareesh Chandrasekar participated in TechSparks 2026, discussing how India can strengthen its capabilities in semiconductors, intelligent machines, and advanced manufacturing.
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Industry News
Bengaluru's AGNIT Semiconductors Joins Karnataka Deep-Tech Policy Discussions at IVCA Bharat Roundtable
Bengaluru-based AGNIT Semiconductors participated in the IVCA Bharat Deep-tech Roundtable, joining investors, policymakers and startup founders to discuss policy support for India's emerging deep-tech industry.
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Industry News
20 Indian Fabless Semiconductor Companies Developing Chips for Telecom, RF and Wireless Applications
India's fabless semiconductor ecosystem is expanding, with companies developing RF chips, GaN devices, wireless communication SoCs, IoT processors, power management ICs and other technologies for telecom and connected infrastructure.
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Industry News
AGNIT Semiconductors Bets on Indigenous GaN as India Enters Next Phase of Semiconductor Mission
Bengaluru-based AGNIT Semiconductors, founded in 2019 to develop indigenous GaN semiconductor technology, sees India’s Semicon 2.0 push as an opportunity to move domestic semiconductor innovation from design and IP toward manufacturing and deployment.
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Products
RF Power Transistors · Agnit Semiconductors
15 W RF Power GaN HEMT
AG28S15D
The AG28S15D from Agnit Semiconductors is a GaN-on-SiC RF power HEMT supplied as a die for communications, avionics and radar systems. It operates from DC to 2.4 GHz with a 28 V drain bias. At 2.4 GHz and a case temperature of 25 °C, the electrical-characteristics table lists typical saturated output power of 15 W, power gain of 15 dB at Psat and drain efficiency of 55%. The specified Psat bias is VDD = 28 V and IDQ = 30 mA. Separate measured pulsed load-pull results at 2.4 GHz in deep Class-AB operation (VDS,Q = 28 V; IDS,Q = 30 mA) report 16 W output at 3 dB compression, 16 dB gain and 56% drain efficiency. These condition-specific measurements are distinct from the headline electrical characteristics. Small-signal S-parameters are available on request. Source: Agnit AG28S15D datasheet, Version 2.0, March 2024, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
2-inch Epitaxial GaN-on-sapphire HEMT Wafer
AGAH2C100S
The AGAH2C100S from Agnit Semiconductors is a 2-inch MOCVD-grown epitaxial GaN-on-sapphire HEMT wafer for high-frequency rf devices; strategic and telecommunication applications. Its material-characteristics table specifies sheet resistance ≤400 Ω/sq, sheet carrier density ≥2 × 10^13 cm^-2 and electron mobility ≥600 cm²/Vs. The wafer uses 2-inch c-plane sapphire SSP. Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGAH2C100S datasheet, Version 2.0 December 2024, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
2-inch Epitaxial GaN-on-sapphire HEMT Wafer
AGAH2C25S
The AGAH2C25S from Agnit Semiconductors is a 2-inch MOCVD-grown epitaxial GaN-on-sapphire HEMT wafer for high-frequency rf devices; strategic and telecommunication applications. Its material-characteristics table specifies sheet resistance ≤400 Ω/sq, sheet carrier density ≥9 × 10^12 cm^-2 and electron mobility ≥1700 cm²/Vs. The wafer uses 2-inch c-plane sapphire SSP. Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGAH2C25S datasheet, Version 2.0 December 2024, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
2-inch Epitaxial GaN-on-Si HEMT Wafer
AGSH2C25SA
The AGSH2C25SA from Agnit Semiconductors is a 2-inch MOCVD-grown epitaxial GaN-on-Si HEMT wafer for power switching; rf devices across vhf to x-band; strategic and telecommunication applications. Its material-characteristics table specifies sheet resistance ≤500 Ω/sq, sheet carrier density ≥7 × 10^12 cm^-2 and electron mobility ≥1600 cm²/Vs. The wafer uses p-type Si (111). Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGSH2C25SA datasheet, Version 2.0 December 2024, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
2-inch Epitaxial GaN-on-SiC HEMT Wafer
AGCH2C100S
The AGCH2C100S from Agnit Semiconductors is a 2-inch MOCVD-grown epitaxial GaN-on-SiC HEMT wafer for high-frequency rf devices; strategic and telecommunication applications. Its material-characteristics table specifies sheet resistance ≤300 Ω/sq, sheet carrier density ≥2 × 10^13 cm^-2 and electron mobility ≥600 cm²/Vs. The wafer uses high-purity semi-insulating (HPSI) 4H-SiC {0001} ±0.2°; Si face epi-ready. Buffer breakdown is >900 V at 100 µA/cm². Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGCH2C100S datasheet, Version 2.0 December 2024, pages 1–3.
RF Power Transistors · Agnit Semiconductors
25 W RF Power GaN HEMT
AG50S25F
The AG50S25F from Agnit Semiconductors is a 25 W GaN-on-SiC RF power HEMT die for communications, avionics and radar applications. Its operating range is DC–2.4 GHz with a 50 V drain bias. Source device details: 3 mm device; packaged die schematic: 1200 × 1000 μm. At 2.4 GHz and Tc = 25 °C, Table 2 specifies 25 W typical saturated output, 13 dB typical power gain at Psat and 57% typical drain efficiency. The saturated-power bias is VDD = 50 V, IDQ = 30 mA. Separate pulsed load-pull measurements at 2.4 GHz in deep Class-AB operation (VDS,Q = 50 V; IDS,Q = 30 mA) report 31 W output at 3 dB compression, 14.5 dB gain and 59% drain efficiency. These are condition-specific measured results, separate from the rated electrical characteristics. Small-signal S-parameters are available on request. Table 1 absolute maximum ratings: drain-source voltage 150 V; gate-source voltage -10, 0.0 V; maximum forward gate current 3 mA; maximum drain current 2.4 A (each with 25 °C condition). Storage temperature is printed as a single 25 °C value, not a range. Operating junction temperature is unspecified (dashes). No temperature range or missing rating is inferred. Table 2 drain-current maximum exceeds Table 1 maximum drain current; both values and their distinct conditions are retained. Source: Agnit AG50S25F datasheet, Version 2.0, March 2024, pages 1–3.
RF Power Transistors · Agnit Semiconductors
29 W RF Power GaN HEMT
AG50S25D
The AG50S25D from Agnit Semiconductors is a 29 W GaN-on-SiC RF power HEMT die for communications, avionics and radar applications. Its operating range is DC–2.4 GHz with a 50 V drain bias. Source device details: 3 mm device; die dimensions 1.1 × 1 mm; drain/gate pad 250 × 150 μm; source pad 750 × 150 μm. At 2.4 GHz and Tc = 25 °C, Table 2 specifies 29 W typical saturated output, 16.5 dB typical power gain at Psat and 61% typical drain efficiency. The saturated-power bias is VDD = 50 V, IDQ = 30 mA. Separate pulsed load-pull measurements at 2.4 GHz in deep Class-AB operation (VGS,Q = -3.95 V; VDS,Q = 50 V) report 44.71 dBm (29.6 W) output at 3 dB compression, 16.68 dB gain and 61.48% drain efficiency. These are condition-specific measured results, separate from the rated electrical characteristics. Small-signal S-parameters are available on request. Table 1 absolute maximum ratings: drain-source voltage 150 V; gate-source voltage -10, 0.0 V; maximum forward gate current 3 mA; maximum drain current 2.4 A (each with 25 °C condition). Storage temperature is printed as a single 25 °C value, not a range. Operating junction temperature is unspecified (dashes). No temperature range or missing rating is inferred. Table 2 drain-current maximum exceeds Table 1 maximum drain current; both values and their distinct conditions are retained. The datasheet title, headline and electrical table rate this product at 29 W despite the 25 in its part number. Table 2 labels power gain at Psat and gives the condition “Gain at 3db compression”; both source details are retained. Source: Agnit AG50S25D datasheet, Version 2.0, March 2024, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
4-inch Epitaxial GaN-on-Si HEMT Wafer
AGSH4C26GA
The AGSH4C26GA from Agnit Semiconductors is a 4-inch MOCVD-grown epitaxial GaN-on-Si HEMT wafer for power switching; high-voltage gan devices for power conversion. Its material-characteristics table specifies sheet resistance ≤500 Ω/sq, sheet carrier density ≥9 × 10^12 cm^-2 and electron mobility ≥1600 cm²/Vs. The wafer uses p-type Si (111). Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGSH4C26GA datasheet, Version 2.0 December 2024, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
4-inch Epitaxial GaN-on-SiC HEMT Wafer
AGCH4C23G
The AGCH4C23G from Agnit Semiconductors is a 4-inch MOCVD-grown epitaxial GaN-on-SiC HEMT wafer for rf devices across vhf to x-band; strategic and telecommunication applications. Its material-characteristics table specifies sheet resistance ≤350 Ω/sq, sheet carrier density ≥9 × 10^12 cm^-2 and electron mobility ≥1800 cm²/Vs. The wafer uses high-purity semi-insulating (HPSI) 4H-SiC {0001} ±0.2°; Si face epi-ready. Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGCH4C23G datasheet, Version 2.0 December 2024, pages 1–3.
RF Power Transistors · Agnit Semiconductors
45 W RF Power GaN HEMT
AG50S45F
The AG50S45F from Agnit Semiconductors is a 45 W GaN-on-SiC RF power HEMT die for communications, avionics and radar applications. Its operating range is DC–2.4 GHz with a 50 V drain bias. At 2.4 GHz and Tc = 25 °C, Table 2 specifies 45 W typical saturated output, 11 dB typical power gain at Psat and 58% typical drain efficiency. The saturated-power bias is VDD = 50 V, IDQ = 60 mA. Separate pulsed load-pull measurements at 2.4 GHz in deep Class-AB operation (VGS,Q = -3.75 V; VDS,Q = 50 V) report 47.25 dBm (53 W) output at 3 dB compression, 11 dB gain and 58% drain efficiency. These are condition-specific measured results, separate from the rated electrical characteristics. Small-signal S-parameters are available on request. Table 1 absolute maximum ratings: drain-source voltage 150 V; gate-source voltage -10, 0.0 V; maximum forward gate current 6 mA; maximum drain current 4.8 A (each with 25 °C condition). Storage temperature is printed as a single 25 °C value, not a range. Operating junction temperature is unspecified (dashes). No temperature range or missing rating is inferred. Source inconsistency: Table 2 states drain current Min / Typ / Max = 4.2 / 4.8 / 4.6 A. The typical value exceeds the maximum; these values are preserved exactly as printed, pending manufacturer clarification. Source: Agnit AG50S45F datasheet, Version 2.0, March 2024, pages 1–3.
RF Power Transistors · Agnit Semiconductors
45 W RF Power GaN HEMT
AG28S45F
The AG28S45F from Agnit Semiconductors is a 45 W GaN-on-SiC RF power HEMT die for communications, avionics and radar applications. Its operating range is DC–2.4 GHz with a 28 V drain bias. Source device details: 15 mm device; packaged die schematic: 4 × 1 mm. At 2.4 GHz and Tc = 25 °C, Table 2 specifies 45 W typical saturated output and 52 W maximum, 9 dB typical power gain at Psat and 52% typical drain efficiency (56% maximum). The saturated-power bias is VDD = 28 V, IDQ = 400 mA. Separate pulsed load-pull measurements at 2.4 GHz in deep Class-AB operation (VDS,Q = 28 V; IDS,Q = 400 mA) report 52 W output at 3 dB compression, 10.6 dB gain and 56% drain efficiency. These are condition-specific measured results, separate from the rated electrical characteristics. Small-signal S-parameters are available on request. Table 1 absolute maximum ratings: drain-source voltage 100 V; gate-source voltage -10, 0.0 V; maximum forward gate current 15 mA; maximum drain current 12 A (each with 25 °C condition). Storage temperature is printed as a single 25 °C value, not a range. Operating junction temperature is unspecified (dashes). No temperature range or missing rating is inferred. Table 2 drain-current maximum exceeds Table 1 maximum drain current; both values and their distinct conditions are retained. Source inconsistency: Table 2 gate-quiescent voltage condition specifies VDD = 50 V, IDQ = 400 mA, while the headline drain bias, RF saturated-power condition and pulsed load-pull bias are 28 V. The printed 50 V test condition is preserved without correction. Source: Agnit AG28S45F datasheet, Rev. 2.0, February 2026, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
6-inch Epitaxial GaN-on-Si HEMT Wafer
AGSH6C23G
The AGSH6C23G from Agnit Semiconductors is a 6-inch MOCVD-grown epitaxial GaN-on-Si HEMT wafer for power switching; high-voltage gan devices for power conversion. Its material-characteristics table specifies sheet resistance ≤450 Ω/sq, sheet carrier density ≥8 × 10^12 cm^-2 and electron mobility ≥1600 cm²/Vs. The wafer uses p-type Si (111). Buffer breakdown is >900 V at 100 µA/cm². Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGSH6C23G datasheet, Version 2.0 December 2024, pages 1–3.
RF Power Transistors · Agnit Semiconductors
90 W RF Power GaN HEMT
AG50S90F
The AG50S90F from Agnit Semiconductors is a 90 W GaN-on-SiC RF power HEMT die for communications, avionics and radar applications. Its operating range is DC–2.4 GHz with a 50 V drain bias. Source device details: 15 mm device; packaged die schematic: 4 × 1 mm. At 2.4 GHz and Tc = 25 °C, Table 2 specifies 90 W typical saturated output and 102 W maximum, 13 dB typical power gain at Psat and 55% typical drain efficiency. The saturated-power bias is VDD = 50 V, IDQ = 400 mA. Separate pulsed load-pull measurements at 2.4 GHz in deep Class-AB operation (VDS,Q = 50 V; IDS,Q = 400 mA) report 102 W output at 3 dB compression, 14 dB gain and 60% drain efficiency. These are condition-specific measured results, separate from the rated electrical characteristics. Small-signal S-parameters are available on request. Table 1 absolute maximum ratings: drain-source voltage 150 V; gate-source voltage -10, 0.0 V; maximum forward gate current 15 mA; maximum drain current 12 A (each with 25 °C condition). Storage temperature is printed as a single 25 °C value, not a range. Operating junction temperature is unspecified (dashes). No temperature range or missing rating is inferred. Table 2 drain-current maximum exceeds Table 1 maximum drain current; both values and their distinct conditions are retained. Source: Agnit AG50S90F datasheet, Rev. 2.0, February 2026, pages 1–3.
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