Search results for “GaN”
89 results across products, companies, articles and jobs (0 jobs).
Products (13)
RF Power Transistors · Agnit Semiconductors
15 W RF Power GaN HEMT
AG28S15D
The AG28S15D from Agnit Semiconductors is a GaN-on-SiC RF power HEMT supplied as a die for communications, avionics and radar systems. It operates from DC to 2.4 GHz with a 28 V drain bias. At 2.4 GHz and a case temperature of 25 °C, the electrical-characteristics table lists typical saturated output power of 15 W, power gain of 15 dB at Psat and drain efficiency of 55%. The specified Psat bias is VDD = 28 V and IDQ = 30 mA. Separate measured pulsed load-pull results at 2.4 GHz in deep Class-AB operation (VDS,Q = 28 V; IDS,Q = 30 mA) report 16 W output at 3 dB compression, 16 dB gain and 56% drain efficiency. These condition-specific measurements are distinct from the headline electrical characteristics. Small-signal S-parameters are available on request. Source: Agnit AG28S15D datasheet, Version 2.0, March 2024, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
2-inch Epitaxial GaN-on-sapphire HEMT Wafer
AGAH2C100S
The AGAH2C100S from Agnit Semiconductors is a 2-inch MOCVD-grown epitaxial GaN-on-sapphire HEMT wafer for high-frequency rf devices; strategic and telecommunication applications. Its material-characteristics table specifies sheet resistance ≤400 Ω/sq, sheet carrier density ≥2 × 10^13 cm^-2 and electron mobility ≥600 cm²/Vs. The wafer uses 2-inch c-plane sapphire SSP. Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGAH2C100S datasheet, Version 2.0 December 2024, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
2-inch Epitaxial GaN-on-sapphire HEMT Wafer
AGAH2C25S
The AGAH2C25S from Agnit Semiconductors is a 2-inch MOCVD-grown epitaxial GaN-on-sapphire HEMT wafer for high-frequency rf devices; strategic and telecommunication applications. Its material-characteristics table specifies sheet resistance ≤400 Ω/sq, sheet carrier density ≥9 × 10^12 cm^-2 and electron mobility ≥1700 cm²/Vs. The wafer uses 2-inch c-plane sapphire SSP. Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGAH2C25S datasheet, Version 2.0 December 2024, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
2-inch Epitaxial GaN-on-Si HEMT Wafer
AGSH2C25SA
The AGSH2C25SA from Agnit Semiconductors is a 2-inch MOCVD-grown epitaxial GaN-on-Si HEMT wafer for power switching; rf devices across vhf to x-band; strategic and telecommunication applications. Its material-characteristics table specifies sheet resistance ≤500 Ω/sq, sheet carrier density ≥7 × 10^12 cm^-2 and electron mobility ≥1600 cm²/Vs. The wafer uses p-type Si (111). Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGSH2C25SA datasheet, Version 2.0 December 2024, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
2-inch Epitaxial GaN-on-SiC HEMT Wafer
AGCH2C100S
The AGCH2C100S from Agnit Semiconductors is a 2-inch MOCVD-grown epitaxial GaN-on-SiC HEMT wafer for high-frequency rf devices; strategic and telecommunication applications. Its material-characteristics table specifies sheet resistance ≤300 Ω/sq, sheet carrier density ≥2 × 10^13 cm^-2 and electron mobility ≥600 cm²/Vs. The wafer uses high-purity semi-insulating (HPSI) 4H-SiC {0001} ±0.2°; Si face epi-ready. Buffer breakdown is >900 V at 100 µA/cm². Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGCH2C100S datasheet, Version 2.0 December 2024, pages 1–3.
RF Power Transistors · Agnit Semiconductors
25 W RF Power GaN HEMT
AG50S25F
The AG50S25F from Agnit Semiconductors is a 25 W GaN-on-SiC RF power HEMT die for communications, avionics and radar applications. Its operating range is DC–2.4 GHz with a 50 V drain bias. Source device details: 3 mm device; packaged die schematic: 1200 × 1000 μm. At 2.4 GHz and Tc = 25 °C, Table 2 specifies 25 W typical saturated output, 13 dB typical power gain at Psat and 57% typical drain efficiency. The saturated-power bias is VDD = 50 V, IDQ = 30 mA. Separate pulsed load-pull measurements at 2.4 GHz in deep Class-AB operation (VDS,Q = 50 V; IDS,Q = 30 mA) report 31 W output at 3 dB compression, 14.5 dB gain and 59% drain efficiency. These are condition-specific measured results, separate from the rated electrical characteristics. Small-signal S-parameters are available on request. Table 1 absolute maximum ratings: drain-source voltage 150 V; gate-source voltage -10, 0.0 V; maximum forward gate current 3 mA; maximum drain current 2.4 A (each with 25 °C condition). Storage temperature is printed as a single 25 °C value, not a range. Operating junction temperature is unspecified (dashes). No temperature range or missing rating is inferred. Table 2 drain-current maximum exceeds Table 1 maximum drain current; both values and their distinct conditions are retained. Source: Agnit AG50S25F datasheet, Version 2.0, March 2024, pages 1–3.
RF Power Transistors · Agnit Semiconductors
29 W RF Power GaN HEMT
AG50S25D
The AG50S25D from Agnit Semiconductors is a 29 W GaN-on-SiC RF power HEMT die for communications, avionics and radar applications. Its operating range is DC–2.4 GHz with a 50 V drain bias. Source device details: 3 mm device; die dimensions 1.1 × 1 mm; drain/gate pad 250 × 150 μm; source pad 750 × 150 μm. At 2.4 GHz and Tc = 25 °C, Table 2 specifies 29 W typical saturated output, 16.5 dB typical power gain at Psat and 61% typical drain efficiency. The saturated-power bias is VDD = 50 V, IDQ = 30 mA. Separate pulsed load-pull measurements at 2.4 GHz in deep Class-AB operation (VGS,Q = -3.95 V; VDS,Q = 50 V) report 44.71 dBm (29.6 W) output at 3 dB compression, 16.68 dB gain and 61.48% drain efficiency. These are condition-specific measured results, separate from the rated electrical characteristics. Small-signal S-parameters are available on request. Table 1 absolute maximum ratings: drain-source voltage 150 V; gate-source voltage -10, 0.0 V; maximum forward gate current 3 mA; maximum drain current 2.4 A (each with 25 °C condition). Storage temperature is printed as a single 25 °C value, not a range. Operating junction temperature is unspecified (dashes). No temperature range or missing rating is inferred. Table 2 drain-current maximum exceeds Table 1 maximum drain current; both values and their distinct conditions are retained. The datasheet title, headline and electrical table rate this product at 29 W despite the 25 in its part number. Table 2 labels power gain at Psat and gives the condition “Gain at 3db compression”; both source details are retained. Source: Agnit AG50S25D datasheet, Version 2.0, March 2024, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
4-inch Epitaxial GaN-on-Si HEMT Wafer
AGSH4C26GA
The AGSH4C26GA from Agnit Semiconductors is a 4-inch MOCVD-grown epitaxial GaN-on-Si HEMT wafer for power switching; high-voltage gan devices for power conversion. Its material-characteristics table specifies sheet resistance ≤500 Ω/sq, sheet carrier density ≥9 × 10^12 cm^-2 and electron mobility ≥1600 cm²/Vs. The wafer uses p-type Si (111). Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGSH4C26GA datasheet, Version 2.0 December 2024, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
4-inch Epitaxial GaN-on-SiC HEMT Wafer
AGCH4C23G
The AGCH4C23G from Agnit Semiconductors is a 4-inch MOCVD-grown epitaxial GaN-on-SiC HEMT wafer for rf devices across vhf to x-band; strategic and telecommunication applications. Its material-characteristics table specifies sheet resistance ≤350 Ω/sq, sheet carrier density ≥9 × 10^12 cm^-2 and electron mobility ≥1800 cm²/Vs. The wafer uses high-purity semi-insulating (HPSI) 4H-SiC {0001} ±0.2°; Si face epi-ready. Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGCH4C23G datasheet, Version 2.0 December 2024, pages 1–3.
RF Power Transistors · Agnit Semiconductors
45 W RF Power GaN HEMT
AG50S45F
The AG50S45F from Agnit Semiconductors is a 45 W GaN-on-SiC RF power HEMT die for communications, avionics and radar applications. Its operating range is DC–2.4 GHz with a 50 V drain bias. At 2.4 GHz and Tc = 25 °C, Table 2 specifies 45 W typical saturated output, 11 dB typical power gain at Psat and 58% typical drain efficiency. The saturated-power bias is VDD = 50 V, IDQ = 60 mA. Separate pulsed load-pull measurements at 2.4 GHz in deep Class-AB operation (VGS,Q = -3.75 V; VDS,Q = 50 V) report 47.25 dBm (53 W) output at 3 dB compression, 11 dB gain and 58% drain efficiency. These are condition-specific measured results, separate from the rated electrical characteristics. Small-signal S-parameters are available on request. Table 1 absolute maximum ratings: drain-source voltage 150 V; gate-source voltage -10, 0.0 V; maximum forward gate current 6 mA; maximum drain current 4.8 A (each with 25 °C condition). Storage temperature is printed as a single 25 °C value, not a range. Operating junction temperature is unspecified (dashes). No temperature range or missing rating is inferred. Source inconsistency: Table 2 states drain current Min / Typ / Max = 4.2 / 4.8 / 4.6 A. The typical value exceeds the maximum; these values are preserved exactly as printed, pending manufacturer clarification. Source: Agnit AG50S45F datasheet, Version 2.0, March 2024, pages 1–3.
RF Power Transistors · Agnit Semiconductors
45 W RF Power GaN HEMT
AG28S45F
The AG28S45F from Agnit Semiconductors is a 45 W GaN-on-SiC RF power HEMT die for communications, avionics and radar applications. Its operating range is DC–2.4 GHz with a 28 V drain bias. Source device details: 15 mm device; packaged die schematic: 4 × 1 mm. At 2.4 GHz and Tc = 25 °C, Table 2 specifies 45 W typical saturated output and 52 W maximum, 9 dB typical power gain at Psat and 52% typical drain efficiency (56% maximum). The saturated-power bias is VDD = 28 V, IDQ = 400 mA. Separate pulsed load-pull measurements at 2.4 GHz in deep Class-AB operation (VDS,Q = 28 V; IDS,Q = 400 mA) report 52 W output at 3 dB compression, 10.6 dB gain and 56% drain efficiency. These are condition-specific measured results, separate from the rated electrical characteristics. Small-signal S-parameters are available on request. Table 1 absolute maximum ratings: drain-source voltage 100 V; gate-source voltage -10, 0.0 V; maximum forward gate current 15 mA; maximum drain current 12 A (each with 25 °C condition). Storage temperature is printed as a single 25 °C value, not a range. Operating junction temperature is unspecified (dashes). No temperature range or missing rating is inferred. Table 2 drain-current maximum exceeds Table 1 maximum drain current; both values and their distinct conditions are retained. Source inconsistency: Table 2 gate-quiescent voltage condition specifies VDD = 50 V, IDQ = 400 mA, while the headline drain bias, RF saturated-power condition and pulsed load-pull bias are 28 V. The printed 50 V test condition is preserved without correction. Source: Agnit AG28S45F datasheet, Rev. 2.0, February 2026, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
6-inch Epitaxial GaN-on-Si HEMT Wafer
AGSH6C23G
The AGSH6C23G from Agnit Semiconductors is a 6-inch MOCVD-grown epitaxial GaN-on-Si HEMT wafer for power switching; high-voltage gan devices for power conversion. Its material-characteristics table specifies sheet resistance ≤450 Ω/sq, sheet carrier density ≥8 × 10^12 cm^-2 and electron mobility ≥1600 cm²/Vs. The wafer uses p-type Si (111). Buffer breakdown is >900 V at 100 µA/cm². Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGSH6C23G datasheet, Version 2.0 December 2024, pages 1–3.
RF Power Transistors · Agnit Semiconductors
90 W RF Power GaN HEMT
AG50S90F
The AG50S90F from Agnit Semiconductors is a 90 W GaN-on-SiC RF power HEMT die for communications, avionics and radar applications. Its operating range is DC–2.4 GHz with a 50 V drain bias. Source device details: 15 mm device; packaged die schematic: 4 × 1 mm. At 2.4 GHz and Tc = 25 °C, Table 2 specifies 90 W typical saturated output and 102 W maximum, 13 dB typical power gain at Psat and 55% typical drain efficiency. The saturated-power bias is VDD = 50 V, IDQ = 400 mA. Separate pulsed load-pull measurements at 2.4 GHz in deep Class-AB operation (VDS,Q = 50 V; IDS,Q = 400 mA) report 102 W output at 3 dB compression, 14 dB gain and 60% drain efficiency. These are condition-specific measured results, separate from the rated electrical characteristics. Small-signal S-parameters are available on request. Table 1 absolute maximum ratings: drain-source voltage 150 V; gate-source voltage -10, 0.0 V; maximum forward gate current 15 mA; maximum drain current 12 A (each with 25 °C condition). Storage temperature is printed as a single 25 °C value, not a range. Operating junction temperature is unspecified (dashes). No temperature range or missing rating is inferred. Table 2 drain-current maximum exceeds Table 1 maximum drain current; both values and their distinct conditions are retained. Source: Agnit AG50S90F datasheet, Rev. 2.0, February 2026, pages 1–3.
Companies (42)
Agnit Semiconductors
Indian fab-lite semiconductor company developing GaN wafers, RF devices and modules for strategic and telecom applications.
Alpha Design Technologies
Indian defence and aerospace company developing and manufacturing defence electronics, radar, electronic warfare, tactical communications, avionics, optronics and space systems.
Ananth Technologies
Indian aerospace and defence technology company developing mission-critical electronic systems for satellites, launch vehicles, missiles and strategic communication applications.
Anritsu
Anritsu provides RF, microwave, wireless and optical test and measurement equipment, with sales and support operations in India.
Asthra Projects
Hyderabad-based engineering company developing telecom, defence, power and industrial IoT products and systems.
Astra Microwave Products Limited
Astra Microwave Products Limited is an Indian defence and aerospace electronics company that designs and manufactures RF and microwave subsystems for radar, electronic warfare, satellite communications, telemetry and meteorology applications.
Avantel Limited
Indian defence electronics and telecommunications company specializing in RF systems, satellite communications, software-defined radios, radar technology, and embedded systems.
Bralco Advanced Materials
Bralco develops functional materials, electromagnetic composites and additive manufacturing solutions for industrial and RF applications.
Broadcom India
Broadcom’s wireless portfolio includes RF components and connectivity solutions for cellular, Wi-Fi, Bluetooth and GNSS applications.
Comint Systems and Solutions Pvt Ltd
Indian technology company providing defence electronics, RF and microwave systems, telemetry, satellite ground systems, avionics, and network security solutions.
Cyient
Cyient is an Indian engineering, technology and digital solutions company providing product engineering, communications network design, geospatial services and technology solutions for aerospace, defence, utilities, transportation and telecommunications.
Data Patterns (India) Limited
Indian defence and aerospace electronics company specializing in radar, RF/microwave systems, electronic warfare, communication systems, avionics and automated test equipment.
Defence Research and Development Organisation
DRDO develops indigenous defence technologies, including radar, electronic warfare, communications and electro-optical systems.
Dhruva Space
Indian space technology company specializing in small satellite platforms, satellite launch deployment systems, ground stations, and space-based communication solutions.
EI Wave Digitech
EI Wave Digitech develops RF and microwave products, embedded systems and custom hardware and software solutions.
FermionIC Design
FermionIC Design develops RF beamformers, front-end modules and mixed-signal chipsets for phased-array and communication systems.
GlobalFoundries India
GlobalFoundries provides semiconductor foundry technologies including RF-SOI, SiGe, RF GaN and silicon photonics.
JMA Wireless India
JMA Wireless supplies antennas, distributed antenna systems and software-based wireless network technologies.
KriSemi Design Technologies
KriSemi Design Technologies provides semiconductor design services covering RF, analog and mixed-signal ICs, FPGA, ASIC and embedded systems.
L&T Semiconductor Technologies Limited
L&T Semiconductor Technologies develops integrated circuits for power management, sensing and data processing.
Lotus Microwave Technologies
Hyderabad-based Lotus Microwave Technologies develops RF and microwave products for defence, aerospace, telecom and meteorology.
MACOM India
MACOM supplies RF, microwave and millimetre-wave semiconductor components for communication and high-frequency systems.
N Space Tech
N Space Tech develops satellite systems, ground stations, RF amplifiers, antennas and phased-array technologies.
Optimized Solutions Limited
Ahmedabad-based Optimized Solutions develops embedded, RF and test-and-automation systems for demanding engineering applications.
Qualcomm India
Qualcomm develops wireless semiconductor platforms, RF transceivers and front-end technologies for connected devices.
QuantumEdge Semiconductor
Hyderabad-based QuantumEdge Semiconductor provides analog, mixed-signal, RF and digital semiconductor design services.
Sanlayan
Sanlayan Technologies develops strategic electronics including radar, electronic warfare, communications and rugged embedded systems.
Sanyark Space
Sanyark Space is developing fused positioning, navigation and timing and 5G non-terrestrial communications using a LEO constellation.
Satcom Technologies
Satcom Technologies provides satellite ground systems, satellite communications, instrumentation and sensor solutions.
Silicon Labs India
Silicon Labs develops wireless SoCs, modules and software for IoT connectivity.
Skyroot Aerospace
Skyroot Aerospace develops launch vehicles and launch services for small-satellite missions.
Spintronics AI Semiconductors
Spintronics AI Semiconductors develops semiconductor connectivity technologies and explores advanced compound-semiconductor capabilities.
TagoreTech
TagoreTech develops GaN and GaAs RF semiconductors including switches, amplifiers and switch-LNA modules.
Tata Advanced Systems Limited
Tata Advanced Systems develops aerospace and defence systems including radar, electronic warfare and integrated command-and-control solutions.
Tata Consultancy Services
TCS provides network and product engineering services covering 5G, Open RAN, satellite communications and connected systems.
TISA Aerospace
TISA Aerospace develops and manufactures UAV and loitering-munition systems for defence and surveillance.
Unistring Tech Solutions
Unistring Tech Solutions develops electronics and RF solutions for aerospace, defence and industrial applications.
Visteon Corporation
Visteon develops automotive cockpit electronics, connected-car systems and wireless vehicle technologies.
VRMS RF Designs
VRMS RF Designs provides RF design, research, manufacturing and engineering services for telecom, defence and aerospace.
WiSig Networks
WiSig Networks develops 5G Open RAN systems, cellular device software and IoT silicon, with engineering roots at IIT Hyderabad.
Xark Technologies
Xark Technologies is a fabless RF company developing MMICs, RF front ends, phased arrays and antenna systems.
XDLINX Space Labs
XDLINX Space Labs develops small-satellite and space systems including communication and RF subsystems.
Articles (34)
Qualcomm Begins India Job Cuts with Bengaluru among the first affected locations
Qualcomm has reportedly begun workforce reductions in India, with Bengaluru among the affected locations. The company has not confirmed the number of positions involved.
IIT Bombay's SemiX Summit Highlights GaN Power Devices, Semiconductor Startups and Energy-Efficient AI Hardware
The fourth annual SemiX IIT Bombay Summit brought together semiconductor researchers, startups, and industry participants to discuss GaN power devices, advanced packaging, neuromorphic computing, semiconductor entrepreneurship, and energy-efficient AI hardware.
Hyderabad's QuantumEdge Semiconductor Strengthens Analog and RF Engineering Leadership Team
QuantumEdge Semiconductor introduces three engineering leaders to strengthen its analog, mixed-signal, RF layout, and advanced semiconductor design capabilities.
MAPCON 2026 Announces RF, Microwave and Antenna Engineering Job Fair in Nagpur
MAPCON 2026 will host an internship and job fair at IIM Nagpur from December 14–18, connecting students and professionals with opportunities in RF, microwave, antenna, propagation, and EMC engineering.
Analog Devices Introduces Three new RF Products Covering Frequencies Up to 28 GHz
Analog Devices has introduced three new RF semiconductor products: ADRF5470 digital attenuator, ADL8130 GaAs low-noise amplifier, and ADPA9005 GaN power amplifier, targeting wideband RF applications.
Former Airtel Hardware Architect Hari Vasantha Launches Bengaluru-Based VTARAH Technologies for Telecom and Electronics Engineering
Hari Vasantha, formerly a Principal Hardware Architect at Airtel with previous engineering experience at UNISOC and Qualcomm, has established VTARAH Technologies in Bengaluru to serve telecom, networking, IoT, and industrial electronics markets.
European Union Announces €22 Million for Five 6G Research Projects, Including EU-India 6G Bridge
Europe's Smart Networks and Services Joint Undertaking has announced €22 million in funding for five 6G research initiatives, including EU-INDIA-6G-BRIDGE, which aims to strengthen collaboration between Indian and European telecommunications stakeholders.
Axiro Semiconductor is Aggressively Hiring Senior Analog/Power IC Design Leads for Its New Power Business Unit
Bengaluru-based Axiro Semiconductor is hiring Senior Analog/Power IC Design Engineers with 10–15 years of experience for its new power business unit focused on gate drivers, DC-DC converters, and intelligent power management platforms.
HCLTech and Japan's Rapidus Open Semiconductor Development Centres in Bengaluru and Hubballi
HCLTech and Japanese semiconductor company Rapidus have announced a strategic partnership and inaugurated development centres in Bengaluru and Hubballi to support semiconductor engineering activities.
PierSight Participates in India–Poland Space Industry Roundtable in Bengaluru
PierSight participated in an India–Poland space industry roundtable focused on identifying opportunities for collaboration between companies and organizations from both countries.
Spintronics AI Advances Plans for GaN Semiconductor Fabrication Facility in Ujjain, Madhya Pradesh
Spintronics AI Semiconductors is evaluating a semiconductor design centre and a proposed Gallium Nitride (GaN) fabrication facility in Ujjain, Madhya Pradesh, with the potential to generate 3,800 direct and indirect employment opportunities.
India's Lekha Wireless Contributes to AI/ML Discussions for 5G Advanced and 6G at 3GPP Meeting in South Korea
Indian wireless technology company Lekha Wireless Solutions participated in 3GPP RAN4 meetings in Jeju, South Korea, contributing to discussions on AI/ML-enabled mobility, physical-layer technologies, and ongoing 6G studies.
India's Dhruva Space Explores Potential Collaboration With European Deep Space Energy Company
Dhruva Space Co-Founder and CTO Abhay Egoor visited Deep Space Energy in Riga, Latvia, where discussions explored potential collaboration involving advanced space technologies and radioisotope power systems.
AGNIT Semiconductors CEO Discusses India's Semiconductor and Deep-Tech Manufacturing Future at TechSparks 2026
AGNIT Semiconductors CEO and Co-Founder Hareesh Chandrasekar participated in TechSparks 2026, discussing how India can strengthen its capabilities in semiconductors, intelligent machines, and advanced manufacturing.
Skyworks Brings Together Legacy Qorvo and Skyworks India Teams, Outlines India Vision 2.0
Skyworks India recently hosted an employee integration event bringing together legacy Qorvo and Skyworks teams, highlighting collaboration, organizational alignment and the company's future ambitions in India's semiconductor engineering ecosystem.
Four Indian Defence IPOs Cross 100× Subscription as Investor Mathew Cyriac Backs MTAR, Data Patterns, ideaForge and now Tonbo Imaging
Four Indian defence-linked companies—MTAR Technologies, Data Patterns, ideaForge and now Tonbo Imaging—have reportedly attracted IPO subscriptions exceeding 100 times, highlighting investor interest in India's indigenous defence technology ecosystem.
PierSight's RF Systems Director Dr. Jolly Dhar Elected to International Academy of Astronautics
Dr. Jolly Dhar, Director of RF Systems at Indian space technology startup PierSight, has been elected as a Member (Academician) of the International Academy of Astronautics and recognized with the Distinguished Women Scientist 2026 award for her contributions to radar and spaceborne SAR technologies.
Bengaluru's RFMW Innovations Lab Rebrands as BESSEL Systems, Expands Focus on Advanced RF & Microwave Defence Technologies
Bengaluru-based RFMW Innovations Lab has announced its transition to BESSEL Systems, reflecting its growth from an RF and microwave technology startup into a company developing advanced systems for radar, electronic warfare, aerospace, space, and defence applications.
Bengaluru's AGNIT Semiconductors Joins Karnataka Deep-Tech Policy Discussions at IVCA Bharat Roundtable
Bengaluru-based AGNIT Semiconductors participated in the IVCA Bharat Deep-tech Roundtable, joining investors, policymakers and startup founders to discuss policy support for India's emerging deep-tech industry.
20 Indian Fabless Semiconductor Companies Developing Chips for Telecom, RF and Wireless Applications
India's fabless semiconductor ecosystem is expanding, with companies developing RF chips, GaN devices, wireless communication SoCs, IoT processors, power management ICs and other technologies for telecom and connected infrastructure.
IN-SPACe Urges Indian Space Startups to Adopt Indigenous Semiconductor Chips Developed by SCL Mohali
IN-SPACe is encouraging Indian space startups and research organizations to adopt semiconductor products developed by SCL Mohali for satellites and launch vehicles, strengthening India's indigenous space electronics ecosystem.
RF, Semiconductor and Space Companies Showcase Next-Generation Technologies at IMC 2026
India Mobile Congress 2026 brought together RF semiconductor companies, space technology startups, defence organizations and research institutions showcasing technologies ranging from RF front ends and satellite communications to advanced antenna systems.
CoreEL Technologies Welcomes New Campus Recruits Through Employee Induction Programme
CoreEL Technologies has welcomed its latest batch of campus recruits through an induction programme, where the company's leadership team shared industry insights, professional experiences and perspectives to help the new joiners begin their careers.
DRDO Tests Indigenous High-Altitude Platform to Strengthen India’s Stratospheric Surveillance Capabilities
DRDO has successfully tested an indigenous High-Altitude Platform System that reached 21 km altitude, marking progress towards long-endurance surveillance and secure communications capabilities for India’s defence forces.
India Mobile Congress 2026 Begins Today: 6G, Semiconductors, Satcom and AI Take Center Stage
India Mobile Congress (IMC) 2026 begins today at Yashobhoomi, New Delhi, bringing together more than 150,000 attendees and 300+ exhibitors and partners, with 6G, semiconductors, satellite communications, AI-native telecom and next-generation connectivity among the major technology themes.
Axiro Semiconductors Joins India Mobile Congress 2026 as Silver Partner, to Showcase RF & mmWave Portfolio
Bengaluru-based Axiro Semiconductors will participate as a Silver Partner at India Mobile Congress 2026, showcasing indigenous RF, mmWave, FWA and semiconductor solutions for next-generation telecom and connectivity applications.
Dixon Technologies Subsidiary Patners with USA's Aviat Networks to Manufacture Microwave Radios
Dixon Electro Appliances, a subsidiary of Dixon Technologies, has signed an IP licensing agreement with Aviat Networks India to manufacture and sell microwave radios, strengthening India's domestic telecom infrastructure manufacturing ecosystem.
Skyworks Completes Qorvo Combination, Creating a New Global RF Semiconductor Powerhouse
Skyworks has completed its combination with Qorvo, creating a larger U.S.-based semiconductor company spanning RF front-end, RF GaN, power management, analog and mixed-signal technologies, backed by approximately 8,000 engineers and more than 12,000 issued and pending patents.
L&T Semiconductor Technologies Unveils 40 Products at SEMICON India 2026 including Connectivity Modules
L&T Semiconductor Technologies has unveiled 40 semiconductor products at SEMICON India 2026, including a 1200V silicon carbide MOSFET platform, a BLDC motor controller and new solutions for AI, connectivity, power and security applications.
SpintronicsAI, CSIR-CEERI Partner to Advance Indigenous GaN Semiconductor Technology
SpintronicsAI Semiconductors has partnered with CSIR-CEERI to explore indigenous GaN technology development and fabrication in India, targeting defence, aerospace, telecom, power electronics and other applications.
Semicon India 2.0: India Shifts From Semiconductor Capacity Creation to Ecosystem Leadership
India’s Semicon 2.0 program expands the country’s semiconductor strategy beyond fabs and packaging toward a six-pillar ecosystem covering design, machines and materials, fabrication, advanced packaging, R&D and talent development, backed by an outlay of ₹1,27,500 crore.
DRDO has developed indigenous GaN-on-SiC MMIC, with a tiny 3.5 mm chip capable of delivering up to 30W of power.
DRDO has developed indigenous GaN-on-SiC MMIC technology for advanced radar and electronic-warfare systems, with a tiny 3.5 mm chip capable of delivering up to 30W of power.
Axiro Semiconductor Appoints Venkata Vanukuru as Vice President & General Manager of Power Business Unit
Bengaluru-based Axiro Semiconductor has appointed semiconductor veteran Venkata Vanukuru as Vice President & General Manager of its Power Business Unit, with responsibility spanning business strategy, product and technology roadmaps, engineering, sales and customer partnerships.
AGNIT Semiconductors Bets on Indigenous GaN as India Enters Next Phase of Semiconductor Mission
Bengaluru-based AGNIT Semiconductors, founded in 2019 to develop indigenous GaN semiconductor technology, sees India’s Semicon 2.0 push as an opportunity to move domestic semiconductor innovation from design and IP toward manufacturing and deployment.