DRDO has developed indigenous GaN-on-SiC MMIC, with a tiny 3.5 mm chip capable of delivering up to 30W of power.

DRDO has developed indigenous Gallium Nitride (GaN)-on-Silicon Carbide (SiC) technology aimed at supporting next-generation radar, electronic warfare and high-frequency communication systems. The technology has been developed by DRDO’s Solid State Physics Laboratory (SSPL) and is designed to provide high-power radio-frequency performance in compact semiconductor devices, reducing dependence on imported components.

The reported GaN-based MMIC measures around 3.5 mm and can deliver up to 30W of power. DRDO has also developed GaN high-electron-mobility transistor technology with power levels of up to 150W and MMIC capabilities reaching 40W. Such components can play an important role in modern active electronically scanned array (AESA) radars, where large numbers of transmit/receive modules require compact, efficient and high-power RF devices.

The technology has applications beyond radar, including electronic warfare, satellite communications, aerospace systems and other strategic platforms. GaN devices can operate at high frequencies and power densities, making them suitable for systems that require powerful RF transmission and compact designs. Indigenous availability of these components could also provide greater control over critical technologies used in sensitive defence systems.

DRDO has established GaN-on-SiC fabrication capabilities using four-inch silicon carbide wafers, while the Gallium Arsenide Enabling Technology Centre (GAETEC) in Hyderabad has established limited production capability for indigenous GaN-on-SiC MMICs. The development marks a step towards strengthening India's domestic semiconductor ecosystem for defence applications, although large-scale production and widespread deployment would require further industrialisation and system-level integration.