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Full product catalogue →RF Power Transistors · Agnit Semiconductors
15 W RF Power GaN HEMT
AG28S15D
The AG28S15D from Agnit Semiconductors is a GaN-on-SiC RF power HEMT supplied as a die for communications, avionics and radar systems. It operates from DC to 2.4 GHz with a 28 V drain bias. At 2.4 GHz and a case temperature of 25 °C, the electrical-characteristics table lists typical saturated output power of 15 W, power gain of 15 dB at Psat and drain efficiency of 55%. The specified Psat bias is VDD = 28 V and IDQ = 30 mA. Separate measured pulsed load-pull results at 2.4 GHz in deep Class-AB operation (VDS,Q = 28 V; IDS,Q = 30 mA) report 16 W output at 3 dB compression, 16 dB gain and 56% drain efficiency. These condition-specific measurements are distinct from the headline electrical characteristics. Small-signal S-parameters are available on request. Source: Agnit AG28S15D datasheet, Version 2.0, March 2024, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
2-inch Epitaxial GaN-on-sapphire HEMT Wafer
AGAH2C100S
The AGAH2C100S from Agnit Semiconductors is a 2-inch MOCVD-grown epitaxial GaN-on-sapphire HEMT wafer for high-frequency rf devices; strategic and telecommunication applications. Its material-characteristics table specifies sheet resistance ≤400 Ω/sq, sheet carrier density ≥2 × 10^13 cm^-2 and electron mobility ≥600 cm²/Vs. The wafer uses 2-inch c-plane sapphire SSP. Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGAH2C100S datasheet, Version 2.0 December 2024, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
2-inch Epitaxial GaN-on-sapphire HEMT Wafer
AGAH2C25S
The AGAH2C25S from Agnit Semiconductors is a 2-inch MOCVD-grown epitaxial GaN-on-sapphire HEMT wafer for high-frequency rf devices; strategic and telecommunication applications. Its material-characteristics table specifies sheet resistance ≤400 Ω/sq, sheet carrier density ≥9 × 10^12 cm^-2 and electron mobility ≥1700 cm²/Vs. The wafer uses 2-inch c-plane sapphire SSP. Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGAH2C25S datasheet, Version 2.0 December 2024, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
2-inch Epitaxial GaN-on-Si HEMT Wafer
AGSH2C25SA
The AGSH2C25SA from Agnit Semiconductors is a 2-inch MOCVD-grown epitaxial GaN-on-Si HEMT wafer for power switching; rf devices across vhf to x-band; strategic and telecommunication applications. Its material-characteristics table specifies sheet resistance ≤500 Ω/sq, sheet carrier density ≥7 × 10^12 cm^-2 and electron mobility ≥1600 cm²/Vs. The wafer uses p-type Si (111). Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGSH2C25SA datasheet, Version 2.0 December 2024, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
2-inch Epitaxial GaN-on-SiC HEMT Wafer
AGCH2C100S
The AGCH2C100S from Agnit Semiconductors is a 2-inch MOCVD-grown epitaxial GaN-on-SiC HEMT wafer for high-frequency rf devices; strategic and telecommunication applications. Its material-characteristics table specifies sheet resistance ≤300 Ω/sq, sheet carrier density ≥2 × 10^13 cm^-2 and electron mobility ≥600 cm²/Vs. The wafer uses high-purity semi-insulating (HPSI) 4H-SiC {0001} ±0.2°; Si face epi-ready. Buffer breakdown is >900 V at 100 µA/cm². Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGCH2C100S datasheet, Version 2.0 December 2024, pages 1–3.
RF Power Transistors · Agnit Semiconductors
25 W RF Power GaN HEMT
AG50S25F
The AG50S25F from Agnit Semiconductors is a 25 W GaN-on-SiC RF power HEMT die for communications, avionics and radar applications. Its operating range is DC–2.4 GHz with a 50 V drain bias. Source device details: 3 mm device; packaged die schematic: 1200 × 1000 μm. At 2.4 GHz and Tc = 25 °C, Table 2 specifies 25 W typical saturated output, 13 dB typical power gain at Psat and 57% typical drain efficiency. The saturated-power bias is VDD = 50 V, IDQ = 30 mA. Separate pulsed load-pull measurements at 2.4 GHz in deep Class-AB operation (VDS,Q = 50 V; IDS,Q = 30 mA) report 31 W output at 3 dB compression, 14.5 dB gain and 59% drain efficiency. These are condition-specific measured results, separate from the rated electrical characteristics. Small-signal S-parameters are available on request. Table 1 absolute maximum ratings: drain-source voltage 150 V; gate-source voltage -10, 0.0 V; maximum forward gate current 3 mA; maximum drain current 2.4 A (each with 25 °C condition). Storage temperature is printed as a single 25 °C value, not a range. Operating junction temperature is unspecified (dashes). No temperature range or missing rating is inferred. Table 2 drain-current maximum exceeds Table 1 maximum drain current; both values and their distinct conditions are retained. Source: Agnit AG50S25F datasheet, Version 2.0, March 2024, pages 1–3.
RF Power Transistors · Agnit Semiconductors
29 W RF Power GaN HEMT
AG50S25D
The AG50S25D from Agnit Semiconductors is a 29 W GaN-on-SiC RF power HEMT die for communications, avionics and radar applications. Its operating range is DC–2.4 GHz with a 50 V drain bias. Source device details: 3 mm device; die dimensions 1.1 × 1 mm; drain/gate pad 250 × 150 μm; source pad 750 × 150 μm. At 2.4 GHz and Tc = 25 °C, Table 2 specifies 29 W typical saturated output, 16.5 dB typical power gain at Psat and 61% typical drain efficiency. The saturated-power bias is VDD = 50 V, IDQ = 30 mA. Separate pulsed load-pull measurements at 2.4 GHz in deep Class-AB operation (VGS,Q = -3.95 V; VDS,Q = 50 V) report 44.71 dBm (29.6 W) output at 3 dB compression, 16.68 dB gain and 61.48% drain efficiency. These are condition-specific measured results, separate from the rated electrical characteristics. Small-signal S-parameters are available on request. Table 1 absolute maximum ratings: drain-source voltage 150 V; gate-source voltage -10, 0.0 V; maximum forward gate current 3 mA; maximum drain current 2.4 A (each with 25 °C condition). Storage temperature is printed as a single 25 °C value, not a range. Operating junction temperature is unspecified (dashes). No temperature range or missing rating is inferred. Table 2 drain-current maximum exceeds Table 1 maximum drain current; both values and their distinct conditions are retained. The datasheet title, headline and electrical table rate this product at 29 W despite the 25 in its part number. Table 2 labels power gain at Psat and gives the condition “Gain at 3db compression”; both source details are retained. Source: Agnit AG50S25D datasheet, Version 2.0, March 2024, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
4-inch Epitaxial GaN-on-Si HEMT Wafer
AGSH4C26GA
The AGSH4C26GA from Agnit Semiconductors is a 4-inch MOCVD-grown epitaxial GaN-on-Si HEMT wafer for power switching; high-voltage gan devices for power conversion. Its material-characteristics table specifies sheet resistance ≤500 Ω/sq, sheet carrier density ≥9 × 10^12 cm^-2 and electron mobility ≥1600 cm²/Vs. The wafer uses p-type Si (111). Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGSH4C26GA datasheet, Version 2.0 December 2024, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
4-inch Epitaxial GaN-on-SiC HEMT Wafer
AGCH4C23G
The AGCH4C23G from Agnit Semiconductors is a 4-inch MOCVD-grown epitaxial GaN-on-SiC HEMT wafer for rf devices across vhf to x-band; strategic and telecommunication applications. Its material-characteristics table specifies sheet resistance ≤350 Ω/sq, sheet carrier density ≥9 × 10^12 cm^-2 and electron mobility ≥1800 cm²/Vs. The wafer uses high-purity semi-insulating (HPSI) 4H-SiC {0001} ±0.2°; Si face epi-ready. Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGCH4C23G datasheet, Version 2.0 December 2024, pages 1–3.
RF Power Transistors · Agnit Semiconductors
45 W RF Power GaN HEMT
AG50S45F
The AG50S45F from Agnit Semiconductors is a 45 W GaN-on-SiC RF power HEMT die for communications, avionics and radar applications. Its operating range is DC–2.4 GHz with a 50 V drain bias. At 2.4 GHz and Tc = 25 °C, Table 2 specifies 45 W typical saturated output, 11 dB typical power gain at Psat and 58% typical drain efficiency. The saturated-power bias is VDD = 50 V, IDQ = 60 mA. Separate pulsed load-pull measurements at 2.4 GHz in deep Class-AB operation (VGS,Q = -3.75 V; VDS,Q = 50 V) report 47.25 dBm (53 W) output at 3 dB compression, 11 dB gain and 58% drain efficiency. These are condition-specific measured results, separate from the rated electrical characteristics. Small-signal S-parameters are available on request. Table 1 absolute maximum ratings: drain-source voltage 150 V; gate-source voltage -10, 0.0 V; maximum forward gate current 6 mA; maximum drain current 4.8 A (each with 25 °C condition). Storage temperature is printed as a single 25 °C value, not a range. Operating junction temperature is unspecified (dashes). No temperature range or missing rating is inferred. Source inconsistency: Table 2 states drain current Min / Typ / Max = 4.2 / 4.8 / 4.6 A. The typical value exceeds the maximum; these values are preserved exactly as printed, pending manufacturer clarification. Source: Agnit AG50S45F datasheet, Version 2.0, March 2024, pages 1–3.
RF Power Transistors · Agnit Semiconductors
45 W RF Power GaN HEMT
AG28S45F
The AG28S45F from Agnit Semiconductors is a 45 W GaN-on-SiC RF power HEMT die for communications, avionics and radar applications. Its operating range is DC–2.4 GHz with a 28 V drain bias. Source device details: 15 mm device; packaged die schematic: 4 × 1 mm. At 2.4 GHz and Tc = 25 °C, Table 2 specifies 45 W typical saturated output and 52 W maximum, 9 dB typical power gain at Psat and 52% typical drain efficiency (56% maximum). The saturated-power bias is VDD = 28 V, IDQ = 400 mA. Separate pulsed load-pull measurements at 2.4 GHz in deep Class-AB operation (VDS,Q = 28 V; IDS,Q = 400 mA) report 52 W output at 3 dB compression, 10.6 dB gain and 56% drain efficiency. These are condition-specific measured results, separate from the rated electrical characteristics. Small-signal S-parameters are available on request. Table 1 absolute maximum ratings: drain-source voltage 100 V; gate-source voltage -10, 0.0 V; maximum forward gate current 15 mA; maximum drain current 12 A (each with 25 °C condition). Storage temperature is printed as a single 25 °C value, not a range. Operating junction temperature is unspecified (dashes). No temperature range or missing rating is inferred. Table 2 drain-current maximum exceeds Table 1 maximum drain current; both values and their distinct conditions are retained. Source inconsistency: Table 2 gate-quiescent voltage condition specifies VDD = 50 V, IDQ = 400 mA, while the headline drain bias, RF saturated-power condition and pulsed load-pull bias are 28 V. The printed 50 V test condition is preserved without correction. Source: Agnit AG28S45F datasheet, Rev. 2.0, February 2026, pages 1–3.
GaN Epitaxial Wafers · Agnit Semiconductors
6-inch Epitaxial GaN-on-Si HEMT Wafer
AGSH6C23G
The AGSH6C23G from Agnit Semiconductors is a 6-inch MOCVD-grown epitaxial GaN-on-Si HEMT wafer for power switching; high-voltage gan devices for power conversion. Its material-characteristics table specifies sheet resistance ≤450 Ω/sq, sheet carrier density ≥8 × 10^12 cm^-2 and electron mobility ≥1600 cm²/Vs. The wafer uses p-type Si (111). Buffer breakdown is >900 V at 100 µA/cm². Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGSH6C23G datasheet, Version 2.0 December 2024, pages 1–3.
RF Power Transistors · Agnit Semiconductors
90 W RF Power GaN HEMT
AG50S90F
The AG50S90F from Agnit Semiconductors is a 90 W GaN-on-SiC RF power HEMT die for communications, avionics and radar applications. Its operating range is DC–2.4 GHz with a 50 V drain bias. Source device details: 15 mm device; packaged die schematic: 4 × 1 mm. At 2.4 GHz and Tc = 25 °C, Table 2 specifies 90 W typical saturated output and 102 W maximum, 13 dB typical power gain at Psat and 55% typical drain efficiency. The saturated-power bias is VDD = 50 V, IDQ = 400 mA. Separate pulsed load-pull measurements at 2.4 GHz in deep Class-AB operation (VDS,Q = 50 V; IDS,Q = 400 mA) report 102 W output at 3 dB compression, 14 dB gain and 60% drain efficiency. These are condition-specific measured results, separate from the rated electrical characteristics. Small-signal S-parameters are available on request. Table 1 absolute maximum ratings: drain-source voltage 150 V; gate-source voltage -10, 0.0 V; maximum forward gate current 15 mA; maximum drain current 12 A (each with 25 °C condition). Storage temperature is printed as a single 25 °C value, not a range. Operating junction temperature is unspecified (dashes). No temperature range or missing rating is inferred. Table 2 drain-current maximum exceeds Table 1 maximum drain current; both values and their distinct conditions are retained. Source: Agnit AG50S90F datasheet, Rev. 2.0, February 2026, pages 1–3.