RF Power Transistors
15 W RF Power GaN HEMT
AG28S15D by Agnit Semiconductors
The AG28S15D from Agnit Semiconductors is a GaN-on-SiC RF power HEMT supplied as a die for communications, avionics and radar systems. It operates from DC to 2.4 GHz with a 28 V drain bias. At 2.4 GHz and a case temperature of 25 °C, the electrical-characteristics table lists typical saturated output power of 15 W, power gain of 15 dB at Psat and drain efficiency of 55%. The specified Psat bias is VDD = 28 V and IDQ = 30 mA. Separate measured pulsed load-pull results at 2.4 GHz in deep Class-AB operation (VDS,Q = 28 V; IDS,Q = 30 mA) report 16 W output at 3 dB compression, 16 dB gain and 56% drain efficiency. These condition-specific measurements are distinct from the headline electrical characteristics. Small-signal S-parameters are available on request. Source: Agnit AG28S15D datasheet, Version 2.0, March 2024, pages 1–3.
Specifications
| Parameter | Min | Typ | Max | Unit | Value / Conditions |
|---|---|---|---|---|---|
| Operating frequency | — | — | — | GHz | DC–2.4 GHz |
| Drain bias | — | — | — | V | 28 V drain bias |
| Saturated output power | — | 15 | — | W | 15 W typical; 2.4 GHz, Tc = 25 °C; VDD = 28 V, IDQ = 30 mA |
| Power gain at Psat | — | 15 | — | dB | 15 dB typical at Psat; 2.4 GHz, Tc = 25 °C |
| Drain efficiency | — | 55 | — | % | 55% typical; 2.4 GHz, Tc = 25 °C |
| Drain-source breakdown voltage | — | 100 | — | V | 100 V typical; VGS = −6 V, ID = 3 mA; Tc = 25 °C |
| Gate threshold voltage | -4.3 | -4.1 | -3.8 | V | Min / Typ / Max: −4.3 / −4.1 / −3.8 V; VDS = 10 V, ID = 3 mA; Tc = 25 °C |
| Gate quiescent voltage | -3.8 | -3.7 | -3.6 | V | Min / Typ / Max: −3.8 / −3.7 / −3.6 V; VDD = 28 V, IDQ = 30 mA; Tc = 25 °C |
| Drain current | 2.2 | 2.4 | 2.6 | A | Min / Typ / Max: 2.2 / 2.4 / 2.6 A; VDS = 10 V, VGS = 0 V; Tc = 25 °C |
| Technology | — | — | — | — | GaN-on-SiC HEMT |
| Device form | — | — | — | — | Die |
| Pulsed load-pull output at 3 dB compression | — | — | — | W | 16 W measured at 3 dB compression; pulsed 2.4 GHz, deep Class-AB; VDS,Q = 28 V, IDS,Q = 30 mA |
| Pulsed load-pull power gain | — | — | — | dB | 16 dB measured; pulsed 2.4 GHz, deep Class-AB; VDS,Q = 28 V, IDS,Q = 30 mA |
| Pulsed load-pull drain efficiency | — | — | — | % | 56% measured; pulsed 2.4 GHz, deep Class-AB; VDS,Q = 28 V, IDS,Q = 30 mA |
| Small-signal S-parameters | — | — | — | — | Available on request |
Applications
Technology
Taxonomy
Package: Die
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