RF Power Transistors
25 W RF Power GaN HEMT
AG50S25F by Agnit Semiconductors
The AG50S25F from Agnit Semiconductors is a 25 W GaN-on-SiC RF power HEMT die for communications, avionics and radar applications. Its operating range is DC–2.4 GHz with a 50 V drain bias. Source device details: 3 mm device; packaged die schematic: 1200 × 1000 μm. At 2.4 GHz and Tc = 25 °C, Table 2 specifies 25 W typical saturated output, 13 dB typical power gain at Psat and 57% typical drain efficiency. The saturated-power bias is VDD = 50 V, IDQ = 30 mA. Separate pulsed load-pull measurements at 2.4 GHz in deep Class-AB operation (VDS,Q = 50 V; IDS,Q = 30 mA) report 31 W output at 3 dB compression, 14.5 dB gain and 59% drain efficiency. These are condition-specific measured results, separate from the rated electrical characteristics. Small-signal S-parameters are available on request. Table 1 absolute maximum ratings: drain-source voltage 150 V; gate-source voltage -10, 0.0 V; maximum forward gate current 3 mA; maximum drain current 2.4 A (each with 25 °C condition). Storage temperature is printed as a single 25 °C value, not a range. Operating junction temperature is unspecified (dashes). No temperature range or missing rating is inferred. Table 2 drain-current maximum exceeds Table 1 maximum drain current; both values and their distinct conditions are retained. Source: Agnit AG50S25F datasheet, Version 2.0, March 2024, pages 1–3.
Specifications
| Parameter | Min | Typ | Max | Unit | Value / Conditions |
|---|---|---|---|---|---|
| Operating frequency | — | — | — | GHz | DC–2.4 GHz |
| Drain bias | — | — | — | V | 50 V drain bias |
| Saturated output power | — | 25 | — | W | 25 W typical; F = 2.4 GHz, Tc = 25 °C; VDD = 50 V, IDQ = 30 mA |
| Power gain at Psat | — | 13 | — | db | 13 db typical; Power Gain @ Psat; F = 2.4 GHz, Tc = 25 °C |
| Drain efficiency | — | 57 | — | % | 57% typical; F = 2.4 GHz, Tc = 25 °C |
| Drain-source breakdown voltage | — | 150 | — | V | 150 V typical; VGS = -6 V, ID = 3 mA; F = 2.4 GHz, Tc = 25 °C |
| Gate threshold voltage | -4.3 | -4.1 | -3.8 | V | Min / Typ / Max: -4.3 / -4.1 / -3.8 V; VDS = 10 V, ID = 3 mA; F = 2.4 GHz, Tc = 25 °C |
| Gate quiescent voltage | -3.95 | -3.75 | -3.55 | V | Min / Typ / Max: -3.95 / -3.75 / -3.55 V; VDD = 50 V, IDQ = 30 mA; F = 2.4 GHz, Tc = 25 °C |
| Drain current | 2.2 | 2.4 | 2.6 | A | Min / Typ / Max: 2.2 / 2.4 / 2.6 A; VDS = 10 V, VGS = 0 V; F = 2.4 GHz, Tc = 25 °C |
| Technology | — | — | — | — | GaN-on-SiC HEMT |
| Device form | — | — | — | — | GaN-on-SiC HEMT die; packaged die schematic; 3 mm device; packaged die schematic: 1200 × 1000 μm |
| Pulsed load-pull output at 3 dB compression | — | — | — | W | 31 W at 3 dB compression; Measured pulsed load-pull; 2.4 GHz, deep Class-AB; VDS,Q = 50 V; IDS,Q = 30 mA |
| Pulsed load-pull power gain | — | — | — | dB | 14.5 dB; Measured pulsed load-pull; 2.4 GHz, deep Class-AB; VDS,Q = 50 V; IDS,Q = 30 mA |
| Pulsed load-pull drain efficiency | — | — | — | % | 59%; Measured pulsed load-pull; 2.4 GHz, deep Class-AB; VDS,Q = 50 V; IDS,Q = 30 mA |
| Small-signal S-parameters | — | — | — | — | Small-signal S-parameters available on request |
Applications
Technology
Taxonomy
Package: Die
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