GaN Epitaxial Wafers
2-inch Epitaxial GaN-on-Si HEMT Wafer
AGSH2C25SA by Agnit Semiconductors
The AGSH2C25SA from Agnit Semiconductors is a 2-inch MOCVD-grown epitaxial GaN-on-Si HEMT wafer for power switching; rf devices across vhf to x-band; strategic and telecommunication applications. Its material-characteristics table specifies sheet resistance ≤500 Ω/sq, sheet carrier density ≥7 × 10^12 cm^-2 and electron mobility ≥1600 cm²/Vs. The wafer uses p-type Si (111). Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGSH2C25SA datasheet, Version 2.0 December 2024, pages 1–3.
Specifications
| Parameter | Min | Typ | Max | Unit | Value / Conditions |
|---|---|---|---|---|---|
| Material / substrate | — | — | — | — | GaN-on-Si; p-type Si (111) |
| Nominal wafer diameter | — | — | — | inch | 2-inch nominal |
| Sheet resistance | — | — | — | Ω/sq | ≤500 Ω/sq |
| Sheet carrier density | — | — | — | cm^-2 | ≥7 × 10^12 cm^-2 |
| Electron mobility | — | — | — | cm²/Vs | ≥1600 cm²/Vs |
| Wafer bow | — | — | — | µm | ≤15 µm |
| GaN FWHM (002) | — | — | — | arc secs | ≤600 arc secs; (002) |
| GaN FWHM (102 / 103) | — | — | — | arc secs | ≤900 arc secs; (103) |
| Surface roughness | — | — | — | nm | ≤0.4 nm |
| Buffer breakdown | — | — | — | V | Not specified as a buffer-breakdown table rating. |
| Cap layer | — | — | — | — | SiNₓ; 3 nm |
| Barrier layer | — | — | — | — | Al₀.₂₅Ga₀.₇₅N; 18 ± 1 nm; barrier thickness can be modified on request. |
| Interlayer / spacer | — | — | — | — | Without spacer (introductory description). |
| Channel / buffer / nucleation stack | — | — | — | — | GaN channel → C:doped GaN buffer; Table 2 shows a shared 2 µm thickness cell extending through the channel, buffer and strain-relief/nucleation rows; 5% variation in thickness across the wafer. Individual layer thicknesses are not separately specified. |
| Strain relief layers | — | — | — | — | AlGaN strain relief → AlN nucleation; included in the grouped 2 µm Table 2 thickness cell. |
| Substrate thickness | — | — | — | — | 1000 ± 25 µm |
| Wafer dimensions / flats | — | — | — | — | Diameter 50.8 ± 0.38 mm; primary flat 16 ± 1.7 mm. |
| Source-supported features | — | — | — | — | Device and material quality and uniformity; buffer designed to minimize current collapse; reduced wafer warpage for tool compatibility. Supports RF devices across VHF to X-band (source applicability statement). |
| Source-supported applications | — | — | — | — | Power switching; RF devices across VHF to X-band; strategic and telecommunication applications |
| Source notes | — | — | — | — | Table 1 uses inclusive limits (≤ / ≥), while introductory prose uses less than / greater than; Table 1 limits are retained. No RF operating-frequency range is specified. Shared Table 2 thickness cells are retained as grouped stack values, without assigning a separate thickness to each layer. |
| Datasheet revision | — | — | — | — | Version 2.0 December 2024; pages 1–3 |
Applications
Technology
Taxonomy
Package: Epitaxial wafer
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