45 W RF Power GaN HEMT

The AG28S45F from Agnit Semiconductors is a 45 W GaN-on-SiC RF power HEMT die for communications, avionics and radar applications. Its operating range is DC–2.4 GHz with a 28 V drain bias. Source device details: 15 mm device; packaged die schematic: 4 × 1 mm. At 2.4 GHz and Tc = 25 °C, Table 2 specifies 45 W typical saturated output and 52 W maximum, 9 dB typical power gain at Psat and 52% typical drain efficiency (56% maximum). The saturated-power bias is VDD = 28 V, IDQ = 400 mA. Separate pulsed load-pull measurements at 2.4 GHz in deep Class-AB operation (VDS,Q = 28 V; IDS,Q = 400 mA) report 52 W output at 3 dB compression, 10.6 dB gain and 56% drain efficiency. These are condition-specific measured results, separate from the rated electrical characteristics. Small-signal S-parameters are available on request. Table 1 absolute maximum ratings: drain-source voltage 100 V; gate-source voltage -10, 0.0 V; maximum forward gate current 15 mA; maximum drain current 12 A (each with 25 °C condition). Storage temperature is printed as a single 25 °C value, not a range. Operating junction temperature is unspecified (dashes). No temperature range or missing rating is inferred. Table 2 drain-current maximum exceeds Table 1 maximum drain current; both values and their distinct conditions are retained. Source inconsistency: Table 2 gate-quiescent voltage condition specifies VDD = 50 V, IDQ = 400 mA, while the headline drain bias, RF saturated-power condition and pulsed load-pull bias are 28 V. The printed 50 V test condition is preserved without correction. Source: Agnit AG28S45F datasheet, Rev. 2.0, February 2026, pages 1–3.

Specifications

Package: Die