GaN Epitaxial Wafers
4-inch Epitaxial GaN-on-SiC HEMT Wafer
AGCH4C23G by Agnit Semiconductors
The AGCH4C23G from Agnit Semiconductors is a 4-inch MOCVD-grown epitaxial GaN-on-SiC HEMT wafer for rf devices across vhf to x-band; strategic and telecommunication applications. Its material-characteristics table specifies sheet resistance ≤350 Ω/sq, sheet carrier density ≥9 × 10^12 cm^-2 and electron mobility ≥1800 cm²/Vs. The wafer uses high-purity semi-insulating (HPSI) 4H-SiC {0001} ±0.2°; Si face epi-ready. Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGCH4C23G datasheet, Version 2.0 December 2024, pages 1–3.
Specifications
| Parameter | Min | Typ | Max | Unit | Value / Conditions |
|---|---|---|---|---|---|
| Material / substrate | — | — | — | — | GaN-on-SiC; high-purity semi-insulating (HPSI) 4H-SiC {0001} ±0.2°; Si face epi-ready |
| Nominal wafer diameter | — | — | — | inch | 4-inch nominal |
| Sheet resistance | — | — | — | Ω/sq | ≤350 Ω/sq |
| Sheet carrier density | — | — | — | cm^-2 | ≥9 × 10^12 cm^-2 |
| Electron mobility | — | — | — | cm²/Vs | ≥1800 cm²/Vs |
| Wafer bow | — | — | — | µm | ≤±20 µm (source notation) |
| GaN FWHM (002) | — | — | — | arc secs | ≤200 arc secs; (002) |
| GaN FWHM (102 / 103) | — | — | — | arc secs | ≤350 arc secs; (102) |
| Surface roughness | — | — | — | nm | ≤0.4 nm |
| Buffer breakdown | — | — | — | V | Not specified as a buffer-breakdown table rating. |
| Cap layer | — | — | — | — | GaN; 2 ± 1 nm; thickness can be modified upon request up to 5 nm. |
| Barrier layer | — | — | — | — | Al₀.₂₃Ga₀.₇₅N (as printed); 20 ± 1 nm; additional Table 2 entry 23.5 ± 1.5% appears in the thickness column; barrier thickness and Al composition can be modified on request. |
| Interlayer / spacer | — | — | — | — | AlN; 1 nm; can be removed on request; schematic labels this AlN Spacer. |
| Channel / buffer / nucleation stack | — | — | — | — | GaN channel → C:doped GaN buffer → AlN nucleation; Table 2 shared thickness cell: 2 ± 0.1 µm across these rows; thickness and dopant can be modified on request. |
| Strain relief layers | — | — | — | — | Not separately specified. |
| Substrate thickness | — | — | — | — | 500 µm ± 25 µm |
| Wafer dimensions / flats | — | — | — | — | Diameter 100 ± 0.5 mm; primary flat 32.5 ± 2 mm, <11-20> ±5°; secondary flat 18 ± 2 mm. |
| Source-supported features | — | — | — | — | Device and material quality and uniformity; buffer designed to minimize current collapse; reduced wafer warpage for tool compatibility. Supports RF devices across VHF to X-band (source applicability statement). |
| Source-supported applications | — | — | — | — | RF devices across VHF to X-band; strategic and telecommunication applications |
| Source notes | — | — | — | — | Table 1 uses inclusive limits (≤ / ≥), while introductory prose uses less than / greater than; Table 1 limits are retained. No RF operating-frequency range is specified. Shared Table 2 thickness cells are retained as grouped stack values, without assigning a separate thickness to each layer. Source composition is Al₀.₂₃Ga₀.₇₅N; coefficients and the separate 23.5 ± 1.5% table entry are preserved without correction or reinterpreting the percentage as thickness. |
| Datasheet revision | — | — | — | — | Version 2.0 December 2024; pages 1–3 |
Applications
Technology
Taxonomy
Package: Epitaxial wafer
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