GaN Epitaxial Wafers
6-inch Epitaxial GaN-on-Si HEMT Wafer
AGSH6C23G by Agnit Semiconductors
The AGSH6C23G from Agnit Semiconductors is a 6-inch MOCVD-grown epitaxial GaN-on-Si HEMT wafer for power switching; high-voltage gan devices for power conversion. Its material-characteristics table specifies sheet resistance ≤450 Ω/sq, sheet carrier density ≥8 × 10^12 cm^-2 and electron mobility ≥1600 cm²/Vs. The wafer uses p-type Si (111). Buffer breakdown is >900 V at 100 µA/cm². Layer materials, grouped thickness values and wafer dimensions are retained in the specifications below. RF applicability statements are not an operating-frequency rating. Source: Agnit AGSH6C23G datasheet, Version 2.0 December 2024, pages 1–3.
Specifications
| Parameter | Min | Typ | Max | Unit | Value / Conditions |
|---|---|---|---|---|---|
| Material / substrate | — | — | — | — | GaN-on-Si; p-type Si (111) |
| Nominal wafer diameter | — | — | — | inch | 6-inch nominal |
| Sheet resistance | — | — | — | Ω/sq | ≤450 Ω/sq |
| Sheet carrier density | — | — | — | cm^-2 | ≥8 × 10^12 cm^-2 |
| Electron mobility | — | — | — | cm²/Vs | ≥1600 cm²/Vs |
| Wafer bow | — | — | — | µm | ≤40 µm |
| GaN FWHM (002) | — | — | — | arc secs | ≤550 arc secs; (002) |
| GaN FWHM (102 / 103) | — | — | — | arc secs | ≤650 arc secs; (102) |
| Surface roughness | — | — | — | nm | ≤0.5 nm |
| Buffer breakdown | — | — | — | V | >900 V @100 µA/cm² |
| Cap layer | — | — | — | — | GaN; 2 nm |
| Barrier layer | — | — | — | — | Al₀.₂₃Ga₀.₇₇N; 20 ± 1 nm; barrier thickness can be modified on request. |
| Interlayer / spacer | — | — | — | — | AlN; 1 nm; can be modified. |
| Channel / buffer / nucleation stack | — | — | — | — | GaN channel → C:doped GaN buffer; Table 2 shared channel/buffer thickness: 2.5 µm. 5% variation in thickness across the wafer. |
| Strain relief layers | — | — | — | — | AlGaN superlattice → AlN nucleation; shared Table 2 strain-relief thickness: 2.6 µm; 5% variation in thickness across the wafer. |
| Substrate thickness | — | — | — | — | 1000 ± 25 µm |
| Wafer dimensions / flats | — | — | — | — | Diameter 150 ± 0.3 mm; primary flat 57.5 ± 2.5 mm; primary flat <110> ±1°. |
| Source-supported features | — | — | — | — | Device and material quality and uniformity; reduced wafer warpage for 6-inch tool compatibility; supports a 900 V breakdown voltage for GaN devices (Features). |
| Source-supported applications | — | — | — | — | Power switching; high-voltage GaN devices for power conversion |
| Source notes | — | — | — | — | Table 1 uses inclusive limits (≤ / ≥), while introductory prose uses less than / greater than; Table 1 limits are retained. No RF operating-frequency range is specified. Shared Table 2 thickness cells are retained as grouped stack values, without assigning a separate thickness to each layer. Buffer breakdown is >900 V at 100 µA/cm² in Table 1; the separate Features wording says 900 V. |
| Datasheet revision | — | — | — | — | Version 2.0 December 2024; pages 1–3 |
Applications
Technology
Taxonomy
Package: Epitaxial wafer
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